Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende ...

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