AMD: ->Zen 2: The AMD 7nm Energy-Efficient High-Performance x86-64 Microprocessor Core ->AMD Chiplet Architecture for High-Performance Server and Desktop Products ->Radeon RX 5700 Series: The AMD 7nm Energy-Efficient High-Performance GPUs
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Intel: ->A 64Gb/s 1.4pJ/b/element 60GHz 2×2-Element Phased-Array Receiver with 8b/symbol Polarization MIMO and Spatial Interference Tolerance ->Lakefield and Mobility Compute: A 3D Stacked 10nm and 22FFL Hybrid Processor System in 12×12mm2, 1mm Package-on-Package
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Intel: ->A Fully Integrated 27dBm Dual-Band All-Digital Polar Transmitter Supporting 160MHz for WiFi 6 Applications ->A 3D-Integrated Microring-Based 112Gb/s PAM-4 Silicon-Photonic Transmitter with Integrated Nonlinear Equalization and Thermal Control
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IBM: ->IBM z15: A 12-Core 5.2GHz Microprocessor Note: Finally, will we discover the secret sauce behind your new SRAM macro?
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TSMC: ->A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V_MIN Application
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TSMC: ->A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference ->A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications
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Samsung: ->A 7nm High-Performance and Energy-Efficient Mobile Application Processor with Tri-Cluster CPUs and a Sparsity-Aware NPU ->A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme
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Samsung: ->A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7μm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology ->A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications
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Samsung: ->A 56Gb/s 7.7mW/Gb/s PAM-4 Wireline Transceiver in 10nm FinFET Using MM-CDR-Based ADC Timing Skew Control and Low-Power DSP with Approximate Multiplier ->A 1Tb 4b/Cell NAND Flash Memory with t_PROG=2ms, t_R=110μs and 1.2Gb/s High-Speed IO Rate
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Samsung: ->An 8.5Gb/s/pin 12Gb-LPDDR5 SDRAM with a Hybrid-Bank Architecture using Skew-Tolerant, Low-Power and Speed-Boosting Techniques in a 2nd generation 10nm DRAM Process ->An 8nm 18Gb/s/pin GDDR6 PHY with TX Bandwidth Extension and RX Training Technique
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SK hynix >A 1Tb 4b/Cell 96-Stacked-WL 3D NAND Flash Memory with 30MB/s Program Throughput Using Peripheral Circuit Under Memory Cell Array Technique >A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST
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SK hynix: ->A 0.8-to-2.3GHz Quadrature Error Corrector with Correctable Error Range of 101.6ps Using Minimum Total Delay Tracking and Asynchronous Calibration On-Off Scheme for DRAM Interface
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KIOXIA and WD: ->A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with t_PROG=75μs and t_R=4μs
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I hope to be able to write some articles about this works soon. Stay tuned!
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